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NTD5414N Power MOSFET
24 Amps, 60 Volts Single N-Channel DPAK
Features
* * * * * * * *
Low RDS(on) High Current Capability Avalanche Energy Specified These are Pb-Free Devices LED Lighting and LED Backlight Drivers DC-DC Converters DC Motor Drivers Power Supplies Secondary Side Synchronous Rectification
Parameter Symbol VDSS VGS VGS ID Value 60 $20 $30 24 16 PD IDM TJ, Tstg IS EAS 55 75 -55 to +175 24 86.4 W A C A mJ Unit V V V A
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ID MAX (Note 1) 24 A
Applications
V(BR)DSS 60 V
RDS(ON) MAX 37 mW @ 10 V
N-Channel D
MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)
Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Gate-to-Source Voltage - Nonrepetitive (TP < 10 ms) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current Steady State Steady State TC = 25C TC = 100C TC = 25C G S
MARKING DIAGRAMS
4 Drain YWW 5414N 2 1 3 Drain Gate Source 5414N Y WW G = Device Code = Year = Work Week = Pb-Free Device 4 12 DPAK CASE 369AA STYLE 2
tp = 10 ms
Operating and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 50 Vdc, VGS = 10 V, IL(pk) = 24 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Seconds
3
TL
260
C
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Case (Drain) Steady State (Note 1) Symbol RqJC RqJA Max 2.7 58.6 Unit C/W
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [1 oz] including traces).
(c) Semiconductor Components Industries, LLC, 2008
October, 2008 - Rev. 0
1
Publication Order Number: NTD5414N/D
NTD5414N
ELECTRICAL CHARACTERISTICS (TJ = 25C Unless otherwise specified)
Characteristics OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(th) VGS(th)/TJ VDS(on) RDS(on) gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD td(on) tr td(off) tf VSD trr ta tb QRR VGS = 0 V IS = 24 A TJ = 25C TJ = 125C VGS = 10 V, VDD = 48 V, ID = 24 A, RG = 9.1 W VGS = 10 V, VDS = 48 V, ID = 24 A VGS = 10 V, ID = 24 A VGS = 10 V, ID = 12 A, 150C Drain-to-Source On-Resistance Forward Transconductance CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge VDS = 25 V, VGS = 0 V, f = 1 MHz 800 165 75 25 1.1 4.8 11.3 48 nC 1200 pF VGS = 10 V, ID = 24 A VDS = 15 V, ID = 20 A VGS = 0 V VDS = 60 V TJ = 25C TJ = 150C VDS = 0 V, ID = 250 mA 60 67.3 1.0 50 $100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit
Gate-Body Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On-Voltage
VDS = 0 V, VGS = $20 V VGS = VDS, ID = 250 mA 2.0 3.2 0.74 0.7 0.7 28.4 24
4.0
V mV/C
1.16
V
37
mW S
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage (Note 2) 0.92 0.8 45.7 31.7 14 76 nC ns 1.15 V 12 58 47 69 ns
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Stored Charge
IS = 24 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device NTD5414NT4G Package DPAK (Pb-Free) Shipping 2500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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2
NTD5414N
TYPICAL PERFORMANCE CURVES
40 35 ID, DRAIN CURRENT (A) 30 25 20 15 10 5 0 0 1 2 3 4 4.5 V VGS = 4.2 V 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 5V 4.8 V 7V 40 35 ID, DRAIN CURRENT (A) 30 25 20 15 10 5 0 2 3 TJ = 125C TJ = 25C TJ = -55C 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (V) VDS 10 V
10 V
6V
TJ = 25C 5.5 V
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.08 0.07 0.06 0.05 0.04 0.03 0.02 ID = 24 A TJ = 25C
0.040 TJ = 25C VGS = 10 V
0.030
0.020
5
6
7
8
9
10
0.010 10
15
20
25
30
35
40
45
VGS, GATE-TO-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2.5 ID = 24 A VGS = 10 V IDSS, LEAKAGE (nA) 2.0 1000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V TJ = 150C
1.5
100 TJ = 125C
1.0
0.5 -50
-25
0
25
50
75
100
125
150
175
10
5
10
15
20
25
30
35
40
45
50
55 60
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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3
NTD5414N
TYPICAL PERFORMANCE CURVES
10 8 6 4 2 0 Q1 Q2
VGS, GATE-TO-SOURCE VOLTAGE (V)
1500 C, CAPACITANCE (pF)
VGS = 0 V TJ = 25C
QT
1000
Ciss
500 Coss 10 20 30 40 50 60
0
Crss 0
ID = 24 A TJ = 25C 0 5 10 15 20 25 Qg, TOTAL GATE CHARGE (nC)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000 IS, SOURCE CURRENT (A) VDD = 48 V ID = 24 A VGS = 10 V 100 t, TIME (ns) tr 10 tf td(off) td(on) 25 20 15 10 5 0 0.4
Figure 8. Gate-to-Source Voltage vs. Total Charge
VGS = 0 V TJ = 25C
1
1
10 RG, GATE RESISTANCE (W)
100
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
1000 AVALANCHE ENERGY (mJ) 0 V VGS 10 V Single Pulse TC = 25C 10 ms 10 dc 90 80 1 ms 100 ms 10 ms 70 60 50 40 30 20 10 0 25
Figure 10. Diode Forward Voltage vs. Current
ID = 24 A
ID, DRAIN CURRENT (A)
100
1
0.1
RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V)
50
75
100
125
150
175
TJ, STARTING JUNCTION TEMPERATURE (C)
Figure 11. Maximum Rated Forward Biased Safe Operating Area
Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature
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4
NTD5414N
TYPICAL PERFORMANCE CURVES
100 D = 0.5 10 1 r(t), (C/W) 0.2 0.1 0.05 0.02 0.01 0.1 0.01 Single Pulse Surface-Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (s)
Figure 13. Thermal Response
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NTD5414N
PACKAGE DIMENSIONS
DPAK CASE 369AA-01 ISSUE A
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 --- 0.89 1.27 3.93 ---
-T- B V R
4
SEATING PLANE
C E
S
A
1 2 3
Z H U
F L D
2 PL
J
DIM A B C D E F H J L R S U V Z
0.13 (0.005)
M
T
STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN
SOLDERING FOOTPRINT*
6.20 0.244 3.0 0.118
2.58 0.101
5.80 0.228
1.6 0.063
6.172 0.243
SCALE 3:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NTD5414N/D

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